Kioxia Exceria 500GB M.2 Pcie Nvme Solid State Drive

Features

Description

Kioxia Exceria 500GB M.2 PCIe NVMe SSD 500GB capacity with 10% overprovisioning (46.3GB). Uses BiCS FLASH TLC 112-layer 3D NAND technology, PCIe 3.0 x4 interface with NVMe 1.3 protocol, Sequential read speed up to 2,100 MB/s and write speed up to 1,700 MB/s, Random read/write IOPS 360,000/400,000. Endurance rated at 200 TBW, MTBF 1.5 million hours, with SLC write cache and charge trap topology, Form factor M.2 2280 single-sided, dimensions 80.15 x 22.15 x 2.23 mm.

Operates 0-85C, Retail Box, 1 year warranty Kioxia Exceria 500GB M.2 PCIe NVMe SSD - 500GB capacity with 10% overprovisioning (46.3GB). Uses BiCS FLASH TLC 112-layer 3D NAND technology, PCIe 3.0 x4 interface with NVMe 1.3 protocol, Sequential read speed up to 2,100 MB/s and write speed up to 1,700 MB/s, Random read/write IOPS 360,000/400,000.

Endurance rated at 200 TBW, MTBF 1.5 million hours, with SLC write cache and charge trap topology, Form factor M.2 2280 single-sided, dimensions 80.15 x 22.15 x 2.23 mm. Operates 0-85C, Retail Box, 1 year warranty Product Overview The Kioxia Exceria 500GB M.2 PCIe NVMe SSD offers high-speed storage performance in a compact form factor.

With sequential read speeds of up to 2,100 MB/s and write speeds of 1,700 MB/s, it's ideal for boosting your system's responsiveness. Specifications Product code: LRC20Z500GG8 Description: Kioxia Exceria 500GB M.2 PCIe NVMe Solid State Drive Capacity: 500 GB Overprovisioning: 46.3 GB / 10.0 % Part Number: LRC20Z500GG8 Sequential Read: 2,100 MB/s Sequential Write: 1,700 MB/s Random Read: 360,000 IOPS Random Write: 400,000 IOPS Endurance: 200 TBW MTBF: 1.5 Million Hours Drive Writes per Day (DWPD): 0.2 SLC Write Cache: Yes Form Factor: M.2 2280 (Single-Sided) Interface: PCIe 3.0 x4 Protocol: NVMe 1.3 Name: BiCS5 Type: TLC Technology: 112-layer Speed: 1066 MT/s Capacity: 4 chips @ 1 Tbit Toggle: 4.0 Topology: Charge Trap Dies per Chip: 2 dies @ 512 Gbit Planes per Die: 2 Word Lines: 128 per NAND String 87.5% Vertical Efficiency Read Time (tR): 56 s Program Time (tProg): 484 s Die Read Speed: 571 MB/s Die Write Speed: 66 MB/s Page Size: 16 KB Block Size: 1344 Pages Plane Size: 448 Blocks Manufacturer: Phison Name: PS5012-E12S-32 Architecture: ARM 32-bit Cortex-R5 Core Count: Quad-Core Frequency: 667 MHz Foundry: TSMC Process: 12 nm Flash Channels: 8 @ 667 MT/s Chip Enables: 4 Controller Features: DRAM TRIM: Yes SMART: Yes