Samsung MZ-N5E120BW 850 Evo 120GB SSD M.2

Manufacturer	Samsung
Model Number	MZ-N5E120BW

MZ-N5E120BW 850 EVO 120GB SSD M.2


Specifications:


Type

• Product Type: M.2
  

Application

• Consumer: Client PCs, Yes

Storage:

• Capacity: 1,000 GB **Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)GB, 120 GB* *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)Gb/s, 250 GB* *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)GB, 500 GB* *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)GB.

Key Features:

Sequential Read Speed:
Up to 540 MB/s Sequential Read * *Performance may vary based on system hardware & configuration MB/s, Up to 540 MB/s Sequential Read **Performance may vary based on system hardware & configuration MB/s
 
Interface: 
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface, SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interfaceGb/s
 
Sequential Write Speed: 
520 MB/s, Up to 500 MB/s Sequential Write * *Performance may vary based on system hardware & configuration MB/s
 
Random Read Speed: 
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configuration random Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration KB, Random Read (4KB, QD32): Up to 97,000 IOPS Random Read.
 

• Random Read (4KB, QD1): Up to 10,000 IOPS Random Read 


• Random Read (4KB, QD32): Up to 97,000 IOPS Random Read

Random Write Speed:
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write * *Performance may vary based on system hardware & configuration Random Write (4KB, QD1): Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration KB, Random Write (4KB, QD32): Up to 89,000 IOPS Random Write * 
 

• Random Write (4KB, QD1): Up to 40,000 IOPS Random Write 


• Random Write (4KB, QD32): Up to 89,000 IOPS Random Write 

Memory Speed: 
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM, Samsung 48L 3D V-NAND
512MB LPDDR3, Samsung 48L 3D V-NANDSamsung 1 GB LPDDR3MB/s
 
Controller: 
Samsung MGX Controller