Description
FEATURES The Samsung SSD 850 EVO. The top SSD for top professionals.3D V-NAND Technology and THE SAMSUNG SSD 850 EVO Series Samsungs unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of todays conventional planar NAND architecture. 3D VNAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.The 850 EVO Series is the advanced consumer SSD powered by 3D V-NAND technology that maximizes everyday computing experiences with optimized performance and enhanced reliability. Optimized performance for everyday computing experiences Powered by Samsung's cutting-edge 3D VNAND technology, the 850 EVO mSATA delivers top-class sequential and random read and write performance to optimize everyday computing experiences.The 850 EVO mSATA is seamlessly integrated with 3D V-NAND, MEX/MGX controller, DRAM and software for high optimization. Like the 2.5 form factor model, the 850 EVO mSATA maximizes user experience with trace-based benchmark, meaning that the 850 EVO mSATA provides form factor flexibility for SATA 6Gb/s interface by providing various yet standardized option. Therefore, you can enjoy Samsungs state-of-the-art technology no matter which form factor your device supports. Reinforcement of TurboWrite Technology Samsung was the first one to introduceTuboWrite Technology to sequential write performance in the early stages of the 840 EVO Series. With TurboWrite Technology, write speeds have been significantly accelerated during data transfer by creating a highperformance write buffer in an SSD. If a consecutive write operation (i.e. no idle time) exceeds the size of a buffer, the transfer will exit TurboWrite and be processed at After TurboWrite speeds. Once the buffer is cleared, the TurboWrite performance will resume.However, since the buffer size for TurboWrite is more than sufficient for everyday computer use, users can experience accelerated speeds for most workloads. Guaranteed endurance and reliability for maximum use Guaranteed endurance The 850 EVO Series delivers guaranteed endurance and reliability by doubling the TBW compared to the previous generation 840 EVO Series backed by an industry leading 5 year warranty.With twice the endurance of a typical NAND flash SSD, the 850 EVO Series will keep working as long as you do. All form factors of the 850 EVO Series are guaranteed with a 5 year limited warranty or 75TBW for 120GB and 250GB, 150TBW for 500GB and 1TB. Enhanced reliability with improved sustained performance Through enhanced reliability with improved sustained performance, the 850 EVO mSATA boasts long-term dependable performance of up to 40% longer than the 840 EVO Series with minimized performance degradation. You can use it every day when doing work or entertaining yourself knowing that it will keep performing even with heavy daily workloads over the years. Advanced data encryption Regardless of which form factor it is, the 850 EVO Series provides the same data encryption as the 840 EVO Series does. The Self-Encrypting Drive (SED) security technology will help keep your data safe at all times. The device is equipped with an AES 256-bit hardware-based encryption engine to ensure that your personal files remain secure. A hardware-based encryption engine secures your data without performance degradation that you may experience with a software-based encryption. Furthermore, the 850 EVO mSATA is compliant with advanced security management solutions (TCG Opal and IEEE 1667). Magician will guide you on How to use security features. Moreover, you can erase or initialize the data with the crypto erase service with PSID. Efficient power management for all PC applications Power consumption affects everyone. You actually save of up to 50% more on power than with the 840 EVO Series during write operations thanks to 3D V-NAND consuming half t
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