Description
The KR159NT1A is a microchip with 15 pieces that contains two npn transistors for making differential amplifiers. It has specific voltage and current requirements, including a maximum difference between emitter-base voltages and a maximum leakage current between transistors. It also has a current gain and capacitance at certain frequencies, and can handle a maximum collector-base voltage of 20V and emitter-base voltage of 4V. The microchip can handle a constant collector current of 10mA and a pulsed collector current of 40mA for 30 milliseconds, with a maximum power dissipation of 50mW.
KR159NT1A Microchips are an array of two npn transistors (for making differential amplifiers). 1.8 - free; 2 - collector of transistor VT1; 3 - the base of transistor VT1; 4 - the emitter of transistor VT1; 5 - the emitter of transistor VT2; 6 - the base of transistor VT2; 7 - collector of transistor VT2; The difference between emitter-base voltages of transistors KR159NT1A not more than 3 mV Forward voltage drop of the emitter-base at Ie = 1 mA 0.55 ... 0.75 Reverse current collector-base less than 200 nA Reverse current emitter-base less than 500 nA Leakage current between the transistors VT1 and VT2 at U = 20 V of not more than 20 nA Current gain at UKB = 5, IE = 1 mA 159NT1A - 20 ... 80 -Emitter capacitance at the frequency of 10 MHz not more than 5 pF Collector capacitance at the frequency of 10 MHz to 4 pF Collector-base voltage of 20 V Emitter-base voltage of 4 V Tension between the transistors 20 In Collector current of 10 mA constant Pulsed collector current, tp = 30 ms 40 mA Power dissipation of 50 mW
Related Products
