Description
The text describes a type of transistor called KT897B, which has a structure of n-p-n and is made of silicon. It has a maximum power dissipation of 3 W and 150 W with a heat sink. The boundary frequency for the transistor's current transfer factor is over 10 MHz. The maximum collector-base voltage is 200 V and the maximum emitter-base voltage is 5 V. The maximum constant collector current is 20 A and the static transistor current transfer coefficient is over 400 for circuits with common emitter. The resistance of saturation between the collector and emitter is not more than 0.23 Ohm.
Transistors KT897B silicon epitaxial-planar structures n-p-n composite. KT897B: Structure of the transistor: n-p-n; ?? max - Constantly dissipated collector power: 3 W; ?? ? max - Constant dissipated collector power with heat sink: 150 W; fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 10 MHz; UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 200 V; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; I? max - Maximum permissible constant collector current: 20 A; h21e - Static transistor current transfer coefficient for circuits with common emitter: more than 400; Rke us - Resistance of saturation between the collector and emitter: not more than 0,23 Ohm
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